a p25n10gh/j-hf advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 100v single drive requirement r ds(on) 80m rohs compliant & halogen-free i d 23a description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 201410214 halogen-free product 1 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 3 drain-source voltage 100 gate-source voltage + 20 parameter rating drain current, v gs @ 10v 23 drain current, v gs @ 10v 14.6 -55 to 150 pulsed drain current 1 80 total power dissipation 96 thermal data parameter storage temperature range operating junction temperature range g d s g d s to-251(j) g d s to-252(h) a p25n10 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. the through-hole version (ap25n10gj) are available for low-profile applications. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =16a - - 80 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =16a - 14 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =16a - 19 30 nc q gs gate-source charge v ds =80v - 5 - nc q gd gate-drain ("miller") charge v gs =10v - 6 - nc t d(on) turn-on delay time v dd =50v - 10 - ns t r rise time i d =16a - 28 - ns t d(off) turn-off delay time r g =3.3 -17- ns t f fall time v gs =10v - 2 - ns c iss input capacitance v gs =0v - 1060 1700 pf c oss output capacitance v ds =25v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 8 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =16a, v gs =0v - - 1.3 v t rr reverse recovery time i s =16a, v gs =0v - 90 - ns q rr reverse recovery charge di/dt=100a/s - 380 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap25n10gh/j-hf .
a p25n10gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9 .0v 8 .0v 7.0v v g = 5 .0v 0 10 20 30 40 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 9 .0v 8 .0v 7.0v v g = 5 .0v 50 70 90 110 130 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =16a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.3 0.7 1.1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) .
ap25n10gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 10v q gs q gd q g charge 1 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =64v v ds =80v v ds = 100 v i d =16a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 5 10 15 20 25 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =25 o c v ds =5v t j =150 o c .
ap25n10gh/j-hf marking information to-251 to-252 5 part numbe r package code meet rohs requirement for low voltage mosfet only 25n10gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 25n10gh ywwsss meet rohs requirement for low voltage mosfet only .
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